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论文专利

期刊论文

  1. L.X. Hu#, Z.X. Li#, J.L. Shao, P.H. Cheng, J.R. Wang, A.V. Vasilakos, L. Zhang, Y. Chai, Z.Z. Ye, F. Zhuge*. Electronically reconfigurable memristive neuron capable of operating in both excitation and inhibition modes. Nano Letters, 2024, 24: 10865–10873.
  2. R.Q. Yang, Y. Tian, L.X. Hu, S.Q. Li, F.Z. Wang, D.N. Hu, Q.J. Chen, X.D. Pi, J.G. Lu*, F. Zhuge*, Z.Z. Ye*. Dual-input optoelectronic synaptic transistor based on amorphous ZnAlSnO for multi-target neuromorphic simulation. Materials Today Nano, 2024, 26: 100480.
  3. L.X. Hu, J.L. Shao, J.R. Wang, P.H. Cheng, L. Zhang, Y. Chai, Z.Z. Ye, F. Zhuge*. In situ cryptography in a neuromorphic vision sensor based on light-driven memristors. Applied Physics Reviews, 2024, 11: 011411.（亮点论文）
  4. J. Yang#, L.X. Hu#, L.F. Shen, J.R. Wang, P.H. Cheng, H.M. Lu*, F. Zhuge*, Z.Z. Ye. Optically driven intelligent computing with ZnO memristor. Fundamental Research, 2024, 4: 158–166.
  5. 诸葛霞，朱仁祥，王建民，王敬蕊，诸葛飞*. 面向类脑计算的氧化物忆阻器. 无机材料学报，2023, 38: 1149–1162.（邀请综述）
  6. 诸葛霞，诸葛飞*. 面向新一代智能视觉的光电忆阻器研究进展. 中国材料进展，2023, 42: 614–624.（邀请综述）
  7. B.J. Lu, F. Zhuge, Y. Zhao, Y.J. Zeng, L.Q. Zhang, J.Y. Huang, Z.Z. Ye, J.G. Lu*. Amorphous oxide semiconductors: From fundamental properties to practical applications. Current Opinion in Solid State & Materials Science, 2023, 27: 101092.
  8. B.J. Lu, J.G. Du, J.G. Lu*, S.Q. Li, R.Q. Yang, P.W. Liu, J.Y. Huang*, L.X. Chen, F. Zhuge, Z.Z. Ye*. Ultralow operating voltage Nb2O5-based multilevel resistive memory with direct observation of Cu conductive filament. ACS Materials Letters, 2023, 5: 1350–1358.
  9. R.K. Lu#, S.Q. Li#, J.G. Lu*, B.J. Lu, R.Q. Yang, Y.D. Lu, W.Y. Shao, Y. Zhao*, L.P. Zhu, F. Zhuge, Z.Z. Ye*. Homojunction structure amorphous oxide thin film transistors with ultra-high mobility. Journal of Semiconductors, 2023, 44: 052101.
  10. R.Q. Yang, L. Yin, J. G. Lu*, B.J. Lu, X.D. Pi*, S.Q. Li, F. Zhuge*, Y. D. Lu, W.Y. Shao, Z.Z. Ye*. Optoelectronic artificial synaptic device based on amorphous InAlZnO films for learning simulations. ACS Applied Materials & Interfaces, 2022, 14: 46866–46875.
  11. X.Y. Geng#, L.X. Hu#, F. Zhuge*, X.H. Wei*. Retina-inspired two-terminal optoelectronic neuromorphic devices with light-tunable short-term plasticity for self-adjusting sensing. Advanced Intelligent Systems, 2022, 4: 2200019.
  12. 沈柳枫，胡令祥，康逢文，叶羽敏，诸葛飞*. 光电神经形态器件及其应用. 物理学报，2022, 71: 148505.（邀请综述）
  13. 徐慧文，竺臻楠，胡令祥，李俊，俞家欢，卢焕明，张莉，王敬蕊，诸葛飞*. 具有短程抑制特性的超低功耗全碳质子突触器件. 材料科学与工程学报，2022, 40: 396–405.
  14. L.X. Hu, J. Yang, J.R. Wang, P.H. Cheng, L.O. Chua, F. Zhuge*. All-optically controlled memristor for optoelectronic neuromorphic computing. Advanced Functional Materials, 2021, 31: 2005582.（封面论文）
  15. Y.Q. Bu, L. Zhang, D.W. Ma*, F. Zhuge*. Low-temperature synthesis of micro-mesoporous TiO2-SiO2 composite film containing Fe-N co-doped anatase nanocrystals for photocatalytic NO removal. Catalysis Letters, 2021, 151: 2396–2407.
  16. Z.X. Li, X.Y. Geng, J.R. Wang, F. Zhuge*. Emerging artificial neuron devices for probabilistic computing. Frontiers in Neuroscience, 2021, 15: 717947. （邀请综述）
  17. J.R. Wang, X. Zhuge, F. Zhuge*. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence. Science and Technology of Advanced Materials, 2021, 22: 326–344.（邀请综述）
  18. 杨静，卢焕明，叶羽敏，诸葛飞*. ZnO全光控忆阻器及其类突触行为. 材料科学与工程学报，2021, 39: 393–397.
  19. 陈炜东，骆军，曹鸿涛，梁凌燕，张洪亮，张莉，诸葛飞*. CuS/ZnS/ITO透明忆阻器的制备及突触性能. 材料科学与工程学报，2021, 39: 30–34.
  20. Y.C. Wang#, L.X. Hu#, X.H. Wei*, F. Zhuge*. Ultralow operation voltages of a transparent memristor based on bilayer ITO. Applied Physics Letters, 2020, 116: 221602.
  21. 竺臻楠，胡令祥，俞家欢，张洪亮，梁凌燕，张莉，曹鸿涛，诸葛飞*. 溶液法制备全碳忆阻器. 材料科学与工程学报，2020, 38: 64–67.
  22. H.X. Duan, K. Javaid, L.Y. Liang*, L. Huang, J.H. Yu, H.L. Zhang, J.H. Gao, F. Zhuge, T.C. Chang, H.T. Cao*. Broadband optoelectronic synaptic thin-film transistors based on oxide semiconductors. Physica Status Solidi – Rapid Research Letters, 2020, 14: 1900630. 
  23. X. Zhuge#, J.R. Wang#, F. Zhuge*. Photonic synapses for ultrahigh-speed neuromorphic computing. Physica Status Solidi – Rapid Research Letters, 2019, 13: 1900082.（邀请综述）
  24. J.R. Wang, F. Zhuge*. Memristive synapses for brain-inspired computing. Advanced Materials Technologies, 2019, 4: 1800544. （邀请综述）
  25. J.J. Yu, L.Y. Liang*, L.X. Hu, H.X. Duan, W.H. Wu, H.L. Zhang, J.H. Gao, F. Zhuge, T.C. Chang, H.T. Cao*. Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation. Nano Energy, 2019, 62: 772–780.
  26. B.J. Lu, Y.D. Lu, H.J. Zhu, J.Q. Zhang, S.L. Yue, S.Q. Li, F. Zhuge, Z.Z. Ye, J.G. Lu*. Memristors based on amorphous ZnSnO films. Materilas Letters, 2019, 249: 169–172.
  27. W.H. Wu, L.Y. Liang*, J.J. Yu, X. Xiao, H.L. Zhang, J.H. Gao, F. Zhuge, T.C. Chang, L.F. Lan, H.T. Cao*. Aqueous solution-processed, self-flattening AlOx:Y dielectrics for fully-transparent thin-film transistors. Ceramics International, 2019, 45: 15883–15891.
  28. D. Qiu, H. Ji, X.L. Zhang, H.L. Zhang*, H.T. Cao*, G.X. Chen, T. Tian, Z.Y. Chen, X. Guo, L.Y. Liang, J.H. Gao, F. Zhuge. Electrochromism of nanocrystal-in-glass tungsten oxide thin films under various conduction cations. Inorganic Chemistry, 2019, 58: 2089–2098.
  29. R. Zang, H.B. Hu, X.Y. Li, J.H. Gao*, L.Y. Liang, H.L. Zhang, F. Zhuge, J. Luo, H.T. Cao*. Broadband hyperbolic metamaterial covering the whole visible-light region. Optical Letters, 2019, 44: 2970–2973. 
  30. 卜彦强，马德伟，宋琨，曹鸿涛，吴爱国，王立平，陈亮，金亦君，徐裕，张莉，梁凌燕，张洪亮，高俊华，诸葛飞*. 低温制备N–Fe共掺杂TiO2–SiO2可见光光催化复合薄膜. 材料科学与工程学报，2018, 36(6)：921–926.
  31. 王洋，焦雷，赵飞文，李惠，郑秀，曹鸿涛，梁凌燕，张洪亮，高俊华，诸葛飞*. ZnO自整流忆阻器及其神经突触行为. 材料科学与工程学报，2018, 36(5)：726–729.
  32. 胡令祥，施思齐，曹鸿涛，梁凌燕，张洪亮，高俊华，诸葛飞*. 高温处理对ZnO薄膜及其忆阻性能的影响. 材料科学与工程学报，2018, 36(4)：564–567.
  33. L.X. Hu, S. Fu, Y.H. Chen, H.T. Cao, L.Y. Liang, H.L. Zhang, J.H. Gao, J.R. Wang, F. Zhuge*. Ultrasensitive memristive synapses based on lightly oxidized sulfide films. Advanced Materials, 2017, 29: 1606927.
  34. D. Xu, X.N. Shangguan, S.M. Wang, H.T. Cao, L.Y. Liang, H.L. Zhang, J.H. Gao, W.M. Long, J.R. Wang*, F. Zhuge*. Coexistence of two types of metal filaments in oxide memristors. AIP Advances, 2017, 7: 025102.
  35. 李久朋，马德伟，曹鸿涛，竺立强，李俊，李康，梁凌燕，张洪亮，高俊华，诸葛飞*. 一步掩膜法制备ZnO纳米线忆阻器. 材料科学与工程学报，2017, 35(4)：592–595.
  36. 潘若冰，胡丽娟，曹鸿涛，竺立强，李俊，李康，梁凌燕，张洪亮，高俊华，诸葛飞*. 基于ZnO忆阻器的神经突触仿生电子器件. 材料科学与工程学报，2017, 35(2)：232–236.
  37. J.R. Wang#, R.B. Pan#, H.T. Cao, Y. Wang, L.Y. Liang, H.L. Zhang, J.H. Gao, F. Zhuge*.  Anomalous rectification in a purely electronic memristor. Applied Physics Letters,  2016, 109: 143505.
  38. R.B. Pan, J. Li, F. Zhuge*, L.Q. Zhu, L.Y. Liang, H.L. Zhang, J.H. Gao, H.T. Cao*, B. Fu, K. Li. Synaptic devices based on purely electronic memristors. Applied Physics Letters, 2016, 108: 013504.
  39. R.F. Qin, H.T. Cao, L.Y. Liang*, Y.F. Xie, F. Zhuge, H.L. Zhang, J.H. Gao, K. Javaid, C.C. Liu, W.Z. Sun*. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions. Applied Physics Letters, 108(14): 142104.
  40. W. Yong, H.L. Zhang*, H.T. Cao*, T. Tian, J.H. Gao, L.Y. Liang, F. Zhuge. Effect of post-annealing on structural and electrochromic properties of Mo-doped V2O5 thin films. Journal of Sol-Gel Science and Technology, 2016, 77(3): 604–609.
  41. F. Zhuge*, J. Li, H. Chen, J. Wang, L.Q. Zhu, B.R. Bian, B. Fu, Q. Wang, L. Li, R.B. Pan, L.Y. Liang, H.L. Zhang, H.T. Cao*, H. Zhang, Z.C. Li, J.H. Gao, K. Li. Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores. Applied Physics Letters, 2015, 106: 083104.
  42. F. Zhuge*, K. Li, B. Fu, H.L. Zhang, J. Li, H. Chen, L.Y. Liang, J.H. Gao, H.T. Cao*, Z.M. Liu, H. Luo. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells. AIP Advances, 2015, 5: 057125.
  43. X.X. Li, L.Y. Liang*, H.T. Cao*, R.F. Qin, H.L. Zhang, J.H. Gao, F. Zhuge. Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions. Applied Physics Letters, 2015, 106(13): 132102.
  44. H. Chen, F. Zhuge*, B. Fu, J. Li, J. Wang, W.G. Wang, Q. Wang, L. Li, F.G. Li, H.L. Zhang, L.Y. Liang, H. Luo, M. Wang, J.H. Gao, H.T. Cao, H. Zhang, Z.C. Li*. Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments. Carbon, 2014, 76: 459–463.
  45. 伏兵，诸葛飞*，刘志敏，罗浩，梁凌燕，高俊华，曹鸿涛. 氩等离子体处理对ZnO薄膜阻变效应的影响. 材料科学与工程学报，2014, 32(6)：922–924.
  46. J.H. Gao, C.J. Tu, L.Y. Liang, H.L. Zhang, F. Zhuge, W. Liang, H.T. Cao*, K. Yu. Silver nanoparticles with an armor layer embedded in the alumina matrix to form nanocermet thin films with sound thermal stability. ACS Applied Materials & Interfaces, 2014, 6(14): 11550–11557.
  47. L.Y. Liang*, H.T. Cao*, Q. Liu, K.M. Jiang, Z.M. Liu, F. Zhuge, F.L. Deng. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses. ACS Applied Materials & Interfaces, 2014, 6(4): 2255–2261.
  48. S.S. Peng, F. Zhuge*, X.X. Chen, X.J. Zhu, B.L. Hu, L. Pan, B. Chen, R.W. Li*. Mechanism for resistive switching in an oxide-based electrochemical metallization memory. Applied Physics Letters, 2012, 100: 072101.
  49. B.L. Hu, F. Zhuge*, X.J. Zhu, S.S. Peng, X.X. Chen, L. Pan, Q. Yan, R.W. Li*. Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pedant. Journal of Materials Chemistry, 2012, 22: 520–526.
  50. H. Luo, L.Y. Liang*, H.T. Cao*, Z.M. Liu, F. Zhuge. Structural, chemical, optical, and electrical evolution of SnOx films deposited by reactive rf magnetron sputtering. ACS Applied Materials & Interfaces, 2012, 4(10): 5673–5677.
  51. L.Y. Liang, H.T. Cao*, X.B. Chen, Z.M. Liu, F. Zhuge, H. Luo, J. Li, Y.C. Lu, W. Lu. Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities. Applied Physics Letters, 100(26): 263502.
  52. B.L. Hu, R. Quhe, C. Chen, F. Zhuge, X.J. Zhu, S.S. Peng, X.X. Chen, L. Pan, Y.Z. Wu, W.G. Zheng, Q. Yan, J. Lu, R.W. Li*. Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine. Journal of Materials Chemistry, 2012, 22: 16422–16430.
  53. F. Zhuge, B.L. Hu, C.L. He, X.F. Zhou, Z.P. Liu, R.W. Li*. Mechanism of nonvolatile resistive switching in graphene oxide thin films. Carbon, 2011, 49: 3796–3802.
  54. F. Zhuge, S.S. Peng, C.L. He, X.J. Zhu, X.X. Chen, Y.W. Liu, R.W. Li*. Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments. Nanotechnology, 2011, 22: 275204.
  55. X.J. Zhu, F. Zhuge*, M. Li, K.B. Yin, Y.W. Liu, Z.H. Zuo, B. Chen, R.W. Li*. Microstructure dependence of leakage and resistive switching behaviors in Ce-doped BiFeO3 thin films. Journal of Physics D-Applied Physics, 2011, 44: 415104.
  56. C.Y. Dong, D.S. Shang*, L. Shi, J.R. Sun, B.G. Shen, F. Zhuge, R.W. Li, W. Chen. Roles of silver oxide in the bipolar resistance switching devices with silver electrode. Applied Physics Letters, 2011, 98: 072107.
  57. F. Zhuge, W. Dai, C.L. He, A.Y. Wang, Y.W. Liu, M. Li, Y.H. Wu, P. Cui, R.W. Li*. Nonvolatile resistive switching memory based on amorphous carbon. Applied Physics Letters, 2010, 96: 163505.
  58. M. Li, F. Zhuge, X.J. Zhu, K.B. Yin, J.Z. Wang, Y.W. Liu, C.L. He, B. Chen, R.W. Li*. Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 2010, 21: 425202.
  59. K.B. Yin, M. Li, Y.W. Liu, C.L. He, F. Zhuge, B. Chen, W. Lu, X.Q. Pan, R.W. Li*. Resistance switching in polycrystalline BiFeO3 thin films. Applied Physics Letters, 2010, 97: 042101.
  60. D.S. Shang*, L. Shi, J.R. Sun, B.G. Shen, F. Zhuge, R.W. Li, Y.G. Zhao. Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing. Applied Physics Letters, 2010, 96: 072103.
  61. C.L. He, F. Zhuge, X.F. Zhou, M. Li, G.C. Zhou, Y.W. Liu, J.Z. Wang, B. Chen, W.J. Su, Z.P. Liu*, Y.H. Wu, P. Cui, R.W. Li*. Nonvolatile resistive switching in graphene oxide thin films. Applied Physics Letters, 2009, 95: 232101.

 

书籍章节

  1. F. Zhuge, B. Fu, and H.T. Cao. Advances in resistive switching memories based on graphene oxide. New Progress on Graphene Research (Chapter 7), Book ISBN: 980-953-307-516-2, InTech, 2013, pp 185–206.
  2. F. Zhuge, R.W. Li, C.L. He, Z.P. Liu, and X.F. Zhou. Non-volatile resistive switching in graphene oxide thin films. Physics and Applications of Graphene (Chapter 17), Book ISBN: 978-953-307-217-3, InTech, 2011, pp 421–438.

发明专利

  1. 诸葛飞、李亚超、胡令祥、刘威、王耀科，全光控忆阻器、提升其光擦除性能的方法及制备方法，申请时间：2024/01/10，中国，申请号：202410038613.8.
  2. 诸葛飞、胡令祥、邵家乐，一种具有加密功能的神经形态视觉传感器及图像原位物理加密方法，申请时间：2023/11/03，中国，申请号：202311456846.1.
  3. 诸葛飞、王耀科、邵家乐、胡令祥、李宗晓、李波桥，一种感算一体的视觉传感芯片，申请时间：2023/03/31，中国，申请号：202310336199.4.
  4. 诸葛飞、郭真真、胡令祥、伏兵，一种自带光源的光电忆阻器及其制备方法，申请时间：2022/01/18，中国，申请号：202210052052.8.
  5. 诸葛飞、鹿文博、胡令祥，一种基于光电忆阻器同时实现突触短程增强和抑制的方法，申请时间：2021/09/02，中国，申请号：202111025596.7.
  6. 诸葛飞、杨静、胡令祥，一种利用全光控忆阻器实现非易失性布尔逻辑的方法，申请时间：2021/04/21，中国，申请号：202110430358.8.
  7. 诸葛飞、沈柳枫、胡令祥、张莉，一种利用光信号在忆阻器中实现正负光电导的方法，申请时间：2021/01/26，授权时间：2022/10/14，中国，专利号：ZL 202110104850.6.
  8. 诸葛飞、徐慧文、鹿文博、张莉，一种利用光和质子耦合作用模拟神经突触功能的方法，申请时间：2020/06/19，中国，申请号：202010566482.2.
  9. 诸葛飞、胡令祥，一种利用光信号可逆调控忆阻器电导的方法，申请时间：2020/04/22，授权时间：2022/10/14，中国，专利号：ZL 202010322341.6.
  10. 诸葛飞、陈炜东、胡令祥、曹鸿涛，一种忆阻器及其制备方法和应用，申请时间：2019/04/29，授权时间：2023/04/18，中国，专利号：ZL 201910353729.X.
  11. 王敬蕊、宋琨、诸葛飞、曹鸿涛，一种室温催化氧化甲醛的催化剂及其制备方法，申请时间：2018/07/05，授权时间：2021/08/27，中国，专利号：ZL 201810729880.4.
  12. 诸葛飞、竺臻楠、俞家欢、曹鸿涛，一种全碳忆阻器及其制备方法，申请时间：2018/04/16，授权时间：2022/03/08，中国，专利号：ZL 201810339076.5.
  13. 王敬蕊、诸葛飞、郑秀、曹鸿涛，一种全溶液法制备的氧化物忆阻器，申请时间：2017/10/17，授权时间：2021/10/19，中国，专利号：ZL 201710966487.2.
  14. 诸葛飞、胡令祥、曹鸿涛，一种忆阻器及其应用，申请时间：2016/12/19，授权时间：2019/04/02，中国，专利号：ZL 201611178578.1.
  15. 诸葛飞、胡令祥、曹鸿涛，一种忆阻器，申请时间：2016/09/09，中国，申请号：201610813160.7.
  16. 诸葛飞、卜彦强、吴明番、曹鸿涛、吴爱国、徐裕，一种TiO2-SiO2可见光光催化复合薄膜及其制备方法，申请时间：2016/08/01，授权时间：2019/03/05，中国，专利号：ZL 201610634203.5.
  17. 诸葛飞、卜彦强、李振超、梁凌燕、曹鸿涛、吴爱国、曾乐勇、沈折玉、徐裕，一种可见光响应的碳掺杂纳米二氧化钛催化剂的制备方法，申请时间：2015/11/12，授权时间：2018/01/23，中国，专利号：ZL 201510771557.X.
  18. 诸葛飞、李振超、吴爱国、曾乐勇、沈折玉、徐裕、梁凌燕、曹鸿涛，一种钼掺杂的纳米二氧化钛催化剂的制备方法，申请时间：2015/08/03，授权时间：2019/01/11，中国，专利号：ZL 201510468562.3.
  19. 诸葛飞、潘若冰、曹鸿涛、竺立强、李俊，一种生物神经突触仿生电子器件及其制备方法，申请时间：2015/05/19，中国，申请号：201510255588.X.
  20. 诸葛飞、潘若冰、曹鸿涛、竺立强、李俊，一种生物神经突触仿生电子器件的制备方法及其产品，申请时间：2014/11/25，中国，申请号：201410687913.5.
  21. 诸葛飞、伏兵、曹鸿涛，一种电阻型随机存储器的存储单元的制备方法及其产品，申请时间：2014/05/14，授权时间：2018/04/20，中国，专利号：ZL 201410204899.9.
  22. 诸葛飞、吴明番、王敬蕊、李菲，一种可见及近红外光LED光触媒装置及其制备方法，申请时间：2014/04/24，中国，申请号：201410168293.4.
  23. 诸葛飞、曹鸿涛、陈浩，一种氮掺杂多孔碳薄膜的制备方法及其产品，申请时间：2013/09/26，中国，申请号：201310445981.6.
  24. 诸葛飞、陈浩、曹鸿涛，一种电阻型随机存储器的存储单元及其制备方法，申请时间：2013/09/26，授权时间：2017/03/15，中国，专利号：ZL 201310446932.4.
  25. 李润伟、苏文静、诸葛飞、朱小健，一种电流振荡器及其制备方法，申请时间：2011/05/04，授权时间：2015/03/18，中国，专利号：ZL 201110113939.5.
  26. 李润伟、胡本林、诸葛飞、潘亮，一种用于电阻型存储材料的聚西佛碱，申请时间：2011/03/14，授权时间：2012/10/17，中国，专利号：ZL 201110060469.0.
  27. 李润伟、胡本林、诸葛飞、潘亮，一种电阻型随机存储器的存储单元及其制备方法，申请时间：2011/03/14，授权时间：2012/09/19，中国，专利号：ZL 201110060470.3.
  28. 诸葛飞、李润伟，BCN三元化合物及其制备方法，申请时间：2009/11/09，中国，申请号：200910154290.4.
  29. 诸葛飞、李润伟，一种高纯碳化硼粉体的制备方法，申请时间：2009/11/03，授权时间：2011/08/31，中国，专利号：ZL 200910153736.1.
  30. 李润伟、诸葛飞、汪爱英、何聪丽、代伟，一种电阻型随机存储器的存储单元及其制备方法，申请时间：2009/06/24，授权时间：2010/11/10，中国，专利号：ZL 200910100140.5.
  31. 李润伟、诸葛飞、刘兆平、周旭峰、何聪丽，一种电阻型随机存储器的存储单元及其制备方法，申请时间：2009/06/24，授权时间：2010/10/13，中国，专利号：ZL 200910100141.X.
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